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Toshiba Electronic Devices & Storage Corporation
Power semiconductors are used everywhere involving the conversion of electricity, but some power is lost as heat during conversion. The causes are broadly divided into conduction loss and switching loss, which are in a trade-off relationship. Toshiba's high-performance power semiconductors have succeeded in lowering this dichotomy of loss in a well-balanced manner through a variety of innovations. In recent years, high-performance semiconductors with low losses, such as SiC (silicon carbide) and GaN (gallium nitride), which could not be achieved with silicon, have been put to practical use, however, as they are expensive, they are used only in applications with large benefits such as railways and wireless base stations. Silicon power semiconductors are likely to continue to be used in many products. U-MOS X series and DTMOS VI series are state-of-the-art silicon power semiconductors that enable high efficiency in many electric devices in households, and contributes to the energy savings of equipment using those devices.
- Contributes to reducing loss of switching power supplies: 80V N-Channel MOSFET with improved trade-off between on-resistance and charge characteristics (Toshiba Electronic Devices & Storage Corporation)
- Contributes to Higher Efficiency of switched-mode power supply: Aggressive reduction of MOSFET switching loss (Toshiba Electronic Devices & Storage Corporation)