Research News
*The information and links in the topics is current on the date of announcement, but is subject to change without prior notice.
Year
Month
17 Dec, 2018
TOKYO─Toshiba Corporation (TOKYO:6502) and the Institute of Physical and Chemical Research (RIKEN) have developed technology for compacting deep neural networks (DNN) obtained by deep learning. The technology reduces the parameter yielded resulting from the learning process by 80% while maintaining DNN performance, and opens the way to implementing highly accurate recognition processes for speech and images and the like on edge devices.
13 Dec, 2018
TOKYO─Toshiba Corporation (TOKYO: 6502) has applied machine learning (AI) to the problem of detecting anomalies that cause downtime in manufacturing facilities and social infrastructure, and developed a system, "One-Class Learning Time-series Shapelets (OCLTS)," that is 9% more accurate than current approaches and that provides a firm basis for identifying potential problems. OCLTS will improve the accuracy of anomaly detection in industrial equipment, and provide an explanatory basis for determining causes. Once deployed, it will contribute to higher equipment utilization rates and lower maintenance costs.
12 Dec, 2018
The great promise of IoT in the industrial sector is improved productivity and efficiency from increased capacity utilization, fewer equipment malfunctions, and lower maintenance costs. Toshiba Corporation (Tokyo: 6502) is realizing this with OPOSSAM, its newly developed "Online Prediction Method of Stream Data with Self-Adaptive Memory." A major advance in AI for edge devices, OPOSSAM continuously harvests real time data streams from numerous sensors installed in production systems and social infrastructure, and delivers highly accurate predictions of future system status and of the need for and timing of maintenance.
18 Jun, 2018
New Energy and Industrial Technology Development Organization (NEDO) and Toshiba Corporation (TOKYO: 6502) have developed the world's largest film-based perovskite photovoltaic module. The module is 703cm2 and realizes a power conversion efficiency (PCE) of 11.7%, overcoming the difficulties of increasing size and efficiency at the same time. The module was realized with meniscus printing technology owned by Toshiba and a newly developed printing process.
14 Jun, 2018
Toshiba has developed technology that makes it easy to implement physically unclonable functions (PUFs) by using the variations in output from field programmable gate arrays (FPGAs) as the chip fingerprint (ID). The technology realizes mutual authentication between robots and IoT devices.
07 Jun, 2018
Toshiba has developed a simple, low-cost testing method for the phthalate esters that are being added to the European Restriction of Hazardous Substances Directive (RoHS). The new technique uses simple equipment and procedures to keep testing costs low, but nonetheless achieves high separation and accuracy that allows restricted substances to be distinguished from other substances. Details of the method will be presented on 22 May at the Symposium on Environmental Chemistry, in Okinawa, Japan.
23 May, 2018
Twin-Field QKD allows secure quantum key distribution over 500 km of optical fibre
Cambridge, UK, 2 May 2018: The Cambridge Research Laboratory of Toshiba Research Europe Ltd today announced that it has devised a new protocol for quantum key distribution (QKD) that will extend its range to over 500 km of standard telecom fibre. This advance, called Twin-Field QKD, enables the protection of sensitive data transmitted in optical networks between cities. It would allow a secure link between cities like London, Paris, Brussels, Amsterdam or Dublin. The details of the breakthrough are published today in the scientific journal, Nature.
Toshiba's New AI-based Virtual Assistant Technology Provides
Cambridge, UK, 2 May 2018: The Cambridge Research Laboratory of Toshiba Research Europe Ltd today announced that it has devised a new protocol for quantum key distribution (QKD) that will extend its range to over 500 km of standard telecom fibre. This advance, called Twin-Field QKD, enables the protection of sensitive data transmitted in optical networks between cities. It would allow a secure link between cities like London, Paris, Brussels, Amsterdam or Dublin. The details of the breakthrough are published today in the scientific journal, Nature.
Toshiba's New AI-based Virtual Assistant Technology Provides
20 Apr, 2018
Toshiba has developed an AI-based virtual assistant technology for shopping centers and similar venues that adapts the guidance it offers to reflect the latest available information on stores and products. The virtual assistant dynamically changes the content of the dialogues it generates to provide guidance that matches criteria and rating defined by the system operator. It gives users recommendations about shops, merchandise and the like, displaying dialogues quickly, in natural language, and allows the operator to efficiently provide daily updates about things like new products, sales, and special offers. Users get the benefit of up-to-date results that match their expressed interests and intentions. The new technology was demonstrated at "Interaction 2018" conference (5-7 March 2018), a venue for researchers into human-computer interactions.
05 Mar, 2018
TOKYO—Toshiba Corporation (TOKYO: 6502) has developed a new circuit technology for an automotive LiDAR which enables long-range distance measurement while capturing high quality 3D images, securing a major advance in a technology essential for self-driving vehicles. The developed LiDAR using the proposed circuit achieves a measurement range of 200m*1, which is world's highest and twice than that of conventional automobile LiDARs.
09 Feb, 2018
Toshiba has developed an ultra-low-power analog AI accelerator chip for embedded systems. This technology realizes multiply-accumulate operation—which accounts for the majority of neural network operations—using only one-eighth the power of current digital circuits. This chip will accelerate the introduction of AI technologies into embedded devices that operate on battery power, energy harvesting, or remote wireless power, which has been difficult until now.
07 Dec, 2017
Toshiba has developed a gate dielectric process technology for improving the reliability of GaN power devices, which are expected to be the next generation of semiconducting power devices. Application of this technology will greatly reduce the variation in characteristics such as threshold voltage. The use of GaN-MOSFETs with this technology is expected to improve the reliability of GaN power devices and contribute to their further spread. The details of this technology will be presented at the International Electron Devices Meeting (IEDM) in San Francisco on 6 December 2017.
09 Nov, 2017
Toshiba has developed a wireless multi-hop video transmission technology that applies a bucket brigade method to realize full HD video transmission from multiple wireless cameras without any delay. This technology enables autonomous configuration of wireless networks considering the installation environment of surveillance cameras, making it possible to freely arrange surveillance cameras or construct wide-area video surveillance systems that connect multiple drone-mounted cameras. This technology will be demonstrated on 9 November 2017 at the Toshiba Open Innovation Fair 2017.
03 Oct, 2017
・New battery realizes driving range of electric vehicles boosted to 320km on 6-minute, ultra-rapid recharge, triple that possible with current lithium-ion battery.
・New anode material, titanium niobium oxide achieves double the capacity of the anode of current lithium-ion batteries.
・New anode material, titanium niobium oxide achieves double the capacity of the anode of current lithium-ion batteries.
25 Sep, 2017
Toshiba has made a significant advance toward the realization of light, flexible solar modules that can be used in diverse locations by fabricating a perovskite solar cell mini module(Note 2) with the highest energy conversion rate yet achieved.
01 Sep, 2017
Toshiba has developed a new gate-insulating film process technology for SiC-MOSFETs that reduces resistance in their channel region by about 40%, and that is expected to reduce total device resistance by as much as 20%. SiC-MOSFETs are widely seen as next generation, advanced semiconductor power devices, and this reduction of power consumption will contribute to their adoption. Details of the technology was announced at the International Conference on Silicon Carbide and Related Materials (ICSCRM) in Washington DC, on September 18.