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Advanced Devices Laboratories

Teruyuki OHASHI

Teruyuki Ohashi

Ph. D in Engineering
Electronic Devices Lab

Research Area:

  • ● Silicon carbide (SiC) power device, Carrier transport in SiC MOSFET

Papers:

  • ● "Development of Analytical Channel Mobility Model Based on Study of Universal Mobility in SiC MOSFET", Ext. Abstr. Solid State Devices and Materials, 2020, p. 219.
  • ● "Dominant scattering mechanism in SiC MOSFET: comparative study of the universal mobility and the theoretically calculated channel mobility," Japanese Journal of Applied Physics Vol. 59, No. 3, pp. 034003-1–034003-10, Mar. 2020.
  • ● "Investigation of the universal mobility of SiC MOSFETs using wet oxide insulators on carbon face with low interface state density," IEEE Transactions on Electron Devices, Vol. 65, No. 7, pp. 2707–2713, Jul. 2018.
  • ● "Investigation of nitridation and oxidation reactions at SiC/SiO2 interfaces in NO annealing and modeling of their quantitative impacts on mobility of SiC MOSFETs," Japanese Journal of Applied Physics Vol. 56, No. 10, pp. 106502-1–106502-4, Oct. 2017.
  • ● "Evaluation method of threshold voltage shift of SiC MOSFETs under negative gate bias using n-type SiC MOS capacitors," Japanese Journal of Applied Physics, Vol. 55, No. 2, pp. 021302-1–021302-4, Feb. 2016.
  • ● "Evaluation method of the gate dielectric reliability under negative gate bias with the ultraviolet irradiation for supplying hole to SiC MOS capacitors," in the 75th JSAP Autumn Meeting 2014.
  • ● "Evaluation method of the gate insulator reliability under negative gate bias on n-type SiC MOS capacitors," in the 1st Meeting on Advanced Power Semiconductor 2014.

Patents (Issued ones only):

  • ● P6505466, "Semiconductor device and method for manufacturing the same"
  • ● P6584857, "Semiconductor device"
  • ● P6625938, "Semiconductor device, method for manufacturing semiconductor device, inverter circuit, driving device, vehicle, and elevator"
  • ● US9755064B2, "Semiconductor device and method for manufacturing the same"
  • ● US9812529B2, "Semiconductor device and method for manufacturing the same"
  • ● US9916981B2, "Semiconductor device, method for manufacturing semiconductor device, inverter circuit, driving device, vehicle, and elevator"
  • ● US10043883B2, "Semiconductor device, and method of manufacturing semiconductor device"
  • ● US10074539B2, "Semiconductor device, method for manufacturing semiconductor device, inverter circuit, driving device, vehicle, and elevator"
  • ● US10236341B2, "Semiconductor device and method for manufacturing the same"

Membership:

  • ● IEEE and JSAP