Advanced Devices Laboratories


Hiro Gangi

Master’s degree in solid state physics
Electron Devices Lab

Research Area:

  • ● Power device, Semiconductor
  • ● Machine learning


  • ● E. S. Thompson, H. Gangi et al., “Parallel Synthesis of Nanoscale Si Superlattices through Eutectic Confinement for Semiconductor p-n Junctions”, ACS. Appl. Nano Mater., No.4, Vol.2, pp.985-989 (2021).
  • ● H. Gangi et al., "Design Optimization of Multiple Stepped Oxide Field Plate Trench MOSFETs with Machine Learning for Ultralow On-resistance," 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021, pp. 151-154.


  • ● IEEJ (The Institute of Electrical Engineering of Japan)