AI Digital R&D Center

Satoshi YOSHIDA

Satoshi YOSHIDA

Ph.D in Engineering
Electron Devices R&D Dept.

Research Area:

  • ● Power electronics
  • ● Power module and packaging technology

Papers:

  • ● S. Yoshida, T. Yasuzumi, T. Tanaka and Y. Fujiwara, "Package Design Consideration for Suppressing Radiated EMI Noise in Semi-Bridgeless PFC Converters," 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2023.
  • ● S. Yoshida, T. Sakano, R. Gejo, T. Kato, A. Yamaoka, T. Inokuchi, K. Takao, "4.5 kV Double-Gate Reverse-Conducting Press-Pack IEGT," PCIM Europe 2024.

Patents (Issued ones only):

  • ● US20240055386A1, “Semiconductor package”
  • ● US20240297153A1, “Semiconductor package”