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Japanese(Microwave)
GaN HEMTs
GaN HEMTs（Gallium Nitride High Electron Mobility Transistor） GaN is a compound semiconductor with several times the output power capability of GaAs.
C-band GaAs FETs
C-band（4~8GHz）GaAs FET（Gallium Arsenide Field Effect Transistor） GaAs is a compound semiconductor with excellent RF performance.
X, Ku-band GaAs FETs
X-band（8~12GHz）and Ku-band（12~18GHz）GaAs FET（Gallium Arsenide Field Effect Transistor） GaAs is a compound semiconductor with excellent RF performance.
