Microwave Semiconductor

GaN HEMTs

GaN HEMTs（Gallium Nitride High Electron Mobility Transistor） GaN is a compound semiconductor with several times the output power capability of GaAs.

C-band GaAs FETs

C-band（4~8GHz）GaAs FET（Gallium Arsenide Field Effect Transistor） GaAs is a compound semiconductor with excellent RF performance.

X, Ku-band GaAs FETs

X-band（8~12GHz）and Ku-band（12~18GHz）GaAs FET（Gallium Arsenide Field Effect Transistor） GaAs is a compound semiconductor with excellent RF performance.