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Japanese(Microwave)
GaN HEMTs
GaN HEMTs(Gallium Nitride High Electron Mobility Transistor) GaN is a compound semiconductor with several times the output power capability of GaAs.
C-band GaAs FETs
C-band(4~8GHz)GaAs FET(Gallium Arsenide Field Effect Transistor) GaAs is a compound semiconductor with excellent RF performance.
X, Ku-band GaAs FETs
X-band(8~12GHz)and Ku-band(12~18GHz)GaAs FET(Gallium Arsenide Field Effect Transistor) GaAs is a compound semiconductor with excellent RF performance.