技術情報
雑誌・書籍などへの掲載記事
この表は横スクロールできます。
| 2022.01 |
低CO2川崎ブランド マイクロ波半導体「Ku帯 100W GaN HEMT(TGI1314-100 シリーズ)」（低CO2川崎ブランド等推進協議会事務局） |
| 2021.10 |
Power GaN MMIC Die JS9U29-AS（開発中）(PDF形式)JS9U30-AS（開発中）(PDF形式) |
| 2018.11 |
Asia Pacific Microwave Conference 2018 (APMC) 53% PAE 32W Miniaturized X-band GaN HEMT Power Amplifier MMICs(PDF形式)A 2 W 45 % PAE X-Band GaN HEMT Class-F MMIC Power Amplifier(PDF形式) |
| 2015.10 |
2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS2015) GaN MMIC for Ka-Band with 18W(PDF形式) |
| 2014.11 |
Asia Pacific Microwave Conference 2014 (APMC), November '14 GaN HEMTs are Still Ongoing(PDF形式) |
| 2014.11 |
European Microwave Conference 2014 (EuMC 2014), November '14 A 20-Watt Ka-Band GaN High Power Amplifier MMIC(PDF形式) |
| 2014.05 |
Compound Semiconductor Manufacturing Technology Conference (CS MANTECH2014) Effects of Field Plate and Epitaxial Wafer on AlGaN/GaN HEMTs with Active Harmonic Tuning(PDF形式) |
| 2011.06 |
International Microwave Symposium 2011 (IMS2011), June '11 GaN HEMTs with Pre-match for Ka-Band with 18W(PDF形式) |
| 2011.05 |
2011 IEEE MTT-S International Microwave Workshop Series on Innovative Wireless Power Transmission: Technologies, Systems, and Applications Developing GaN HEMTs for high efficiency(PDF形式) |
| 2011.05 |
Compound Semiconductor Manufacturing Technology Conference (CS MANTECH2011), May '11 A Difference of Thermal Design Between GaN and GaAs(PDF形式)Effects of Via Layout on AlGaN/GaN HEMTs at Ka-band(PDF形式) |
| 2010.10 |
Compound Semiconductor IC Symposium 2010 (CSICS2010), Octorber '10 GaN HEMTs with Pre-match for Ka-Band with 20W(PDF形式) |
| 2009.12 |
2009 Asia Pacific Microwave Conference (APMC2009) High PAE and low intermodulation distortion performance of newly developed GaAs FETs using ion implantation process(PDF形式) |
| 2009.08 |
Microwaves &RF, August '09 Sorting Through News From The Boston MTT-S (Endeavor Business Media, LLC) |
| 2009.06 |
International Microwave Symposium 2009 (IMS2009), June '09 Ku-Band AlGaN/GaN-HEMT with over 30% of PAE(PDF形式)Ku-Band, 120-W Power Amplifier Using Gallium Nitride FETs(PDF形式) |
| 2009.05 |
Compound Semiconductor Manufacturing Technology Conference (CS MANTECH2009), May '09 Influence of SiC Substrate Misorientation on AlGaN/GaN HEMTs Performance(PDF形式) |
| 2009.05 |
Microwave Journal, May '09 Development Report of Power FETs for Solid-state Power Amplifiers from GaAs to GaN Devices (Horizon House Publications Inc.) |
| 2008.01 |
2008 IEEE Radio and Wireless Symposium (RWS2008) An X-band 250W solid-state power amplifier using GaN power HEMTs(PDF形式) |
| 2007.10 |
Proceedings of the 2nd European Microwave Integrated Circuits Conference (EuMIC) Ku-band AlGaN/GaN HEMT with Over 30W(PDF形式) |
| 2007.05 |
Compound Semiconductor Manufacturing Technology Conference (CS MANTECH2007) Reliability Study of AlGaN/GaN HEMTs Device(PDF形式) |
| 2006.11 |
2006 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS2006) X-band AlGaN/GaN HEMT with over 80W Output Power(PDF形式) |
東芝レビュー掲載記事
この表は横スクロールできます。
| 2021.03 | 広帯域変調時の歪みを低減したKu帯100 W級GaN HEMT(PDF形式) |
| 2020.01 | 高出力・高効率GaN MMICを適用したレーダー用小型送受信モジュール(PDF形式) |
| 2016.03 | ハンディ型マイクロ波止血器用小型高出力発振器(PDF形式) |
| 2014.12 | レーダ用固体化電力増幅器向けX帯130 W級GaN HEMT(PDF形式) |
| 2012.12 | GaN HEMT素子の通信用途に向けた実用化への取組み(PDF形式) |
| 2012.08 | X帯25 W級小型電力増幅モジュール(PDF形式) |
| 2012.02 | 5 GHz帯気象レーダ用1 kW級GaN固体化電力増幅器(PDF形式) |
| 2011.05 | Ka帯 20W級 GaN 電力HEMT(PDF形式) |
| 2010.11 | 高利得を実現したC帯 16 W級 内部整合型GaAs電力FET(PDF形式) |
| 2008.11 | 高効率X，Ku帯GaAs FET(PDF形式) |
| 2008.05 | Ku 帯50 W 級GaN HEMT(PDF形式) |
| 2008.02 | X帯気象レーダ用 GaN 固体化電力増幅器(PDF形式) |
| 2007.04 | X 帯50 W 級GaN 電力HEMT(PDF形式) |
