Electronic Devices

• Toshiba Develops Technology that Can Mitigate Parasitic Oscillation Between Parallel-Connected Chips in SiC Power Modules with Minimal Gate Resistance that Support High Speed Switching

• Toshiba Develops a World-first Compact Sensing Technology Capable of Measuring Mixture Concentrations of Three or More Gases, Including Carbon Dioxide and Hydrogen, in Real time and Under Actual Environmental Conditions
  -Monitoring multiple gas concentrations with a device less than 1/200th the size and more than 150 times faster compared with conventional systems, contributing to higher efficiency in CO₂ resource conversion and more reliable carbon footprint data-

• Toshiba Develops World’s First Double-Gate RC-IEGT, Reduces Switching Loss

• Toshiba Develops World’s First Double-Gate RC-IEGT, Reduces Switching Loss
• Toshiba Achieves World’s First Demonstration of Substantial Improvements in HDD Recording Performance with Microwave Assisted Switching - Microwave Assisted Magnetic Recording (MAS-MAMR) -Aiming for Early Commercialization of Large-Capacity Nearline HDDs of over 30TB-
• Toshiba’s Triple-Gate IGBT Power Semiconductors Cut Switching Power Losses by 40.5% -Support high efficiency power converters for electrical systems and contribute to the realization of carbon-neutral economy-

• Toshiba’s New Analysis Technology for a Hard Disk Write Head is World’s First to Image Dynamics of a Write Head with Precision of One Ten-billionth of a Second, Will Contribute to Increased Hard Disk Capacities
• Toshiba Announces the World's First Small Module for Direct Angle Detection by a High-Precision Gyroscope
  -Delivering miniaturization with high accuracy, allowing mounting and demonstration experiments on robots, automated guided vehicles, drones, and other small devices-

• Toshiba's Advance in Gate-Insulating Film Process Technology Decreases Resistance in SiC-MOSFETs
  -Next Generation Power Device Technology Reduces Power Consumption and CO₂ Emissions-

• Toshiba Develops a Gate dielectric Process Technology for Improving the Reliability of GaN-MOSFET
• Toshiba's New Gate Insulation Film Process Technology Cuts Resistance in SiC-MOSFETs
• Toshiba develops a hydrogen sensor with rapid detection and low power consumption for a safer hydrogen society
• Toshiba Develops Fluorescence Imaging System that Can Observe Cell Cultures Inside an Incubator