Currently, devices such as insulated gate bipolar transistors (IGBT) (*3) and silicon metal–oxide–semiconductor field-effect transistors (Si-MOSFET) (*4) are typically used for power semiconductors. Further improving efficiency will require reducing the power loss that occurs during power conversion, so the development of next-generation power semiconductors with low loss characteristics such as silicon carbide MOSFET (SiC-MOSFET) (*5) is progressing. Next-generation power semiconductors will reduce power loss in power conversion, achieve high efficiency, and facilitate heat dissipation, thereby enabling reductions in both size and weight. However, when these devices are controlled using conventional circuit methods, power loss reductions come at the expense of increased noise. Furthermore, heat dissipation paths shrink, so in the unlikely event of a short circuit or other fault, the temperature will instantly rise, making it easier for semiconductor elements to break.