IR News
Toshiba to Boost Fab Capacity
--Will build new fabs in northern and western Japan in parallel--
TOKYO--Toshiba Corporation today announced that it would reinforce its leadership in fab capacity by constructing two state-of-the-art fabs, in Yokkaichi, Mie Prefecture, and in Kitakami, Iwate Prefecture. One of the new fabs will initially fabricate advanced generations of NAND flash memory, and it is also expected to produce future memory. The other fab will provide capacity to meet Toshiba's future semiconductor requirements.
By building two production facilities in parallel, Toshiba will be positioned for a timely response to surges in demand, and will further strengthen its competitiveness in the semiconductor business.
The new fabs will be built on the site of Iwate Toshiba Electronics Co., Ltd. (Iwate Toshiba), a Toshiba consolidated subsidiary, and adjacent to Toshiba's Yokkaichi Operations, where four NAND flash fabs are already in operation. Following completion of all required procedures, construction of the new fabs is expected to start in the spring of 2009, targeting completion in 2010. Details of construction schedules will be finalized in due course, in light of progress in approvals and market trends.
Separately today, Toshiba and SanDisk Corporation also signed a non-binding memorandum of understanding on one of the new fabs, targeting a production start-up date in 2010, and a related production joint venture. Details of the fab, including site location, will be finalized as planning progresses.
In the future, Toshiba plans to discuss with SanDisk their interest in participating in the other new fab.
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