K. Ishida et al., “Determination of luminescent sites of rare-earth doped phosphors by transient x-ray diffraction measurement”, 5th International Workshop on Advanced Spectroscopy and Optical Materials (IWASOM2015), 15-7.
2013.12 [国際会議発表]
S. Nunoue et al., "LED Manufacturing Issues Concerning Gallium Nitride on-Silicon (GaN-on-Si) Technology and Wafer Scale Up Challenges (Invited)", IEEE International Electron Devices Meeting (IEDM 2013), 13-2.
2013.09 [国際会議発表]
T. Hikosaka et al., "Reduction of Threading Dislocation by Recoating GaN Island Surface with SiN for High-Efficiency GaN-on-Si-Based LED", 10th International Conference of Nitride Semiconductors (ICNS2013), AP2.47.
2013.05 [国際会議発表]
H. Yoshida et al., "Reduction of threading dislocation in GaN grown on Si(111) substrate by controlling growth mode of GaN employing SiN", The 6th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2013), TB4-4.
2013.12 [国際会議発表]
S. Nunoue et al., "LED Manufacturing Issues Concerning Gallium Nitride on-Silicon (GaN-on-Si) Technology and Wafer Scale Up Challenges (Invited)", IEEE International Electron Devices Meeting (IEDM 2013),13-2.
2013.09 [国際会議発表]
T. Hikosaka et al., "Reduction of Threading Dislocation by Recoating GaN Island Surface with SiN for High-Efficiency GaN-on-Si-Based LED", 10th International Conference of Nitride Semiconductors (ICNS2013), AP2.47.
2013.08 [論文]
G. Hatakoshi et al., "Analysis of Auger Recombination in Wurtzite InGaN", Jpn. J. Appl. Phys., 52, 08JG17(2013).
2013.05 [国際会議発表]
H. Yoshida et al., "Reduction of threading dislocation in GaN grown on Si(111) substrate by controlling growth mode of GaN employing SiN", The 6th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2013) TB4-4.
