Technology
Press Release
Technical Article
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January 2022 |
Low CO2 Kawasaki Brand ‘21 Ku-band 100W Gallium Nitride High-Electron-Mobility Transistor (TGI1314-100 series) (Low CO2 KAWASAKI BRAND PROMOTION COUNCIL) |
October 2021 |
Power GaN MMIC Die JS9U29-AS(Under Development)JS9U30-AS(Under Development) |
November 2018 |
Asia Pacific Microwave Conference 2018 (APMC) 53% PAE 32W Miniaturized X-band GaN HEMT Power Amplifier MMICsA 2 W 45 % PAE X-Band GaN HEMT Class-F MMIC Power Amplifier |
October 2015 |
2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS2015) GaN MMIC for Ka-Band with 18W |
November 2014 |
Asia Pacific Microwave Conference 2014 (APMC), November '14 GaN HEMTs are Still Ongoing |
November 2014 |
European Microwave Conference 2014 (EuMC 2014), November '14 A 20-Watt Ka-Band GaN High Power Amplifier MMIC |
May 2014 |
Compound Semiconductor Manufacturing Technology Conference (CS MANTECH2014) Effects of Field Plate and Epitaxial Wafer on AlGaN/GaN HEMTs with Active Harmonic Tuning |
June 2011 |
International Microwave Symposium 2011 (IMS2011), June '11 GaN HEMTs with Pre-match for Ka-Band with 18W |
May 2011 |
2011 IEEE MTT-S International Microwave Workshop Series on Innovative Wireless Power Transmission: Technologies, Systems, and Applications Developing GaN HEMTs for high efficiency |
May 2011 |
Compound Semiconductor Manufacturing Technology Conference (CS MANTECH2011), May '11 A Difference of Thermal Design Between GaN and GaAsEffects of Via Layout on AlGaN/GaN HEMTs at Ka-band |
Octorber 2010 |
Compound Semiconductor IC Symposium 2010 (CSICS2010), Octorber '10 GaN HEMTs with Pre-match for Ka-Band with 20W |
December 2009 |
2009 Asia Pacific Microwave Conference (APMC2009) High PAE and low intermodulation distortion performance of newly developed GaAs FETs using ion implantation process |
August 2009 |
Microwaves &RF, August '09 Sorting Through News From The Boston MTT-S (Endeavor Business Media, LLC.) |
June 2009 |
International Microwave Symposium 2009 (IMS2009), June '09 Ku-Band AlGaN/GaN-HEMT with over 30% of PAEKu-Band, 120-W Power Amplifier Using Gallium Nitride FETs |
May 2009 |
Compound Semiconductor Manufacturing Technology Conference (CS MANTECH2009), May '09 Influence of SiC Substrate Misorientation on AlGaN/GaN HEMTs Performance |
May 2009 |
Microwave Journal, May '09 Development Report of Power FETs for Solid-state Power Amplifiers from GaAs to GaN Devices (Horizon House Publications Inc.) |
January 2008 |
2008 IEEE Radio and Wireless Symposium (RWS2008) An X-band 250W solid-state power amplifier using GaN power HEMTs |
October 2007 |
Proceedings of the 2nd European Microwave Integrated Circuits Conference (EuMIC) Ku-band AlGaN/GaN HEMT with Over 30W |
May 2007 |
Compound Semiconductor Manufacturing Technology Conference (CS MANTECH2007) Reliability Study of AlGaN/GaN HEMTs Device |
November 2006 |
2006 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS2006) X-band AlGaN/GaN HEMT with over 80W Output Power |
TOSHIBA REVIEW
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